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| CTLM1034-M832D MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER TM Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CTLM1034-M832D consists of a Low VCE (SAT) NPN Transistor and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. Due to its leadless package design this device is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. FEATURES * Dual Chip Device * High Current (1.0A) Transistor and Schottky Rectifier * Low VCE(SAT) NPN Transistor (450mV @ IC = 1.0A Max) * Low VF Schottky Rectifier (550mV @ 1.0A Max) * High Power to Footprint Ratio of 275mW per sq mm (Package Power Dissipation / Package Surface Area) * Small TLM 3x2mm Leadless Surface Mount Package * Complementary Device CTLM1074-M832D 1.65 -65 to +150 76 40 25 6.0 1.0 40 1.0 3.5 10 MAX 100 100 UNITS W C C/W V V V A V A A A UNITS nA nA V V V mV mV Top View Bottom View TLM832D CASE MARKING CODE: CFC APPLICATIONS * Switching Circuits * DC / DC Converters * LCD Backlighting * Battery powered / Portable Equipment applications including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. MAXIMUM RATINGS (TLM832D Package): (TA=25C) SYMBOL Power Dissipation* PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JA MAXIMUM RATINGS Q1: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current MAXIMUM RATINGS D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp<1ms Forward Surge Current, tp = 8ms VCBO VCEO VEBO IC VRRM IF IFRM IFSM ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100A 40 BVCEO IC=10mA 25 BVEBO IE=100A 6.0 VCE(SAT) IC=50mA, IB=5.0mA 20 VCE(SAT) IC=100mA, IB=10mA 35 *FR-4 Epoxy PCB with copper mounting pad area of 54mm2 50 75 R1 (22-July 2008) CTLM1034-M832D Central TM MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER MIN TYP 75 130 200 250 MAX 150 250 400 450 1.1 0.9 300 UNITS mV mV mV mV V V Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (Continued): SYMBOL TEST CONDITIONS VCE(SAT) IC=200mA, IB=20mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=800mA, IB=80mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=100mA hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=1.0A fT VCE=10V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz ELECTRICAL CHARACTERISTICS D1: (TA=25C) SYMBOL TEST CONDITIONS IR VR= 5V IR VR= 8V IR VR= 15V BVR IR= 100A VF IF= 10mA VF IF= 100mA VF IF= 500mA VF IF= 1.0A CJ VR= 4.0V, f=1.0MHz 100 100 100 50 100 10 MHz pF MIN TYP MAX 10 20 50 0.29 0.36 0.45 0.55 40 50 UNITS A A A V V V V V pF TLM832D - MECHANICAL OUTLINE LEAD CODE: 1) BASE Q1 2) EMITTER Q1 3) ANODE D1 4) ANODE D1 5) CATHODE D1 6) CATHODE D1 7) COLLECTOR Q1 8) COLLECTOR Q1 Suggested mounting pad layout for maximum power dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details MARKING CODE: CFC R1 (22-July 2008) |
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